Ge微簇表面氧化层厚度的确定及光致发光现象

半导体微簇光致发光现象是目前物理学的研究热点之一。从光电子能普的基本原理出发，提出了一种确定IVA族元素半导体纳米微微的表面氧化层厚度的有效方法并应用于对Ge微族构成纳米组装薄膜的光学性质和光致发光机制的解释。直径为10nm和微簇由2nm厚的表面氧化层及直径为6nm的未氧化中心构成。该中心具有强的量子约束效应导致的基本带隙展宽（光学吸收边蓝移），氧化层、中心及其组合在紫光的激发下产生复杂的光致发光现象。实验结果与文中所提出的理论模型吻合。

Thickness of Oxidized Surface Layer and Photoluminescence about Ge Cluster

Based on the theory of PLE, an effective method of defining the oxidized surface layer of Ge cluster is presented in this paper. With this method,the optical properties and photoluminescence of Ge cluster assembled nanofilms are interpreted. A Ge cluster about 10 nm in diameter has an oxidized surface layer of 2 nm and an unoxidized center with 6 nm size in diameter. The quantum confinement effect of this center induces the widening of Ge basic energy gap. The oxidized surface layer, the center and their combination induce the complex photoluminescence under ultraviolet excitation.