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条形射频源大口径离子束刻蚀机性能
引用本文:董晓浩,刘颖,赵飞云,徐德权,徐向东,周银贵,汪啸,姚传荣,洪义麟,付绍军,徐朝银.条形射频源大口径离子束刻蚀机性能[J].中国科学技术大学学报,2007,37(4):530-535.
作者姓名:董晓浩  刘颖  赵飞云  徐德权  徐向东  周银贵  汪啸  姚传荣  洪义麟  付绍军  徐朝银
作者单位:中国科学技术大学国家同步辐射实验室,安徽合肥,230029
基金项目:国家高技术研究发展计划(863计划)
摘    要:针对大尺寸基底往复扫描条形离子束来实现大面积刻蚀的特点,实验测试了基于射频感应耦合等离子体离子源大型离子束刻蚀机的性能.利用法拉第筒扫描探测系统在线测量束流密度,通过控制气体流量、调节加速电压等,得到了纵向束流密度±5.3%均匀性的较好结果.刻蚀实验表明40cm长度范围刻蚀深度均匀性为±5.4%,同时具有较好的束流稳定性.添加束阑,并结合掩模修正束流,会得到更好的束流密度与刻蚀深度均匀性.

关 键 词:离子束刻蚀机  条形射频离子源  束流密度均匀性  束阑  大口径衍射光学元件
文章编号:0253-2778(2007)04&05-0530-06
修稿时间:2006-12-252007-03-22

Characteristics of a large-scale ion beam etcher based on radio frequency linear source
DONG Xiao-hao,LIU Ying,ZHAO Fei-yun,XU De-quan,XU Xiang-dong,ZHOU Yin-gui,WANG Xiao,YAO Chuan-rong,HONG Yi-lin,FU Shao-jun,XU Chao-yin.Characteristics of a large-scale ion beam etcher based on radio frequency linear source[J].Journal of University of Science and Technology of China,2007,37(4):530-535.
Authors:DONG Xiao-hao  LIU Ying  ZHAO Fei-yun  XU De-quan  XU Xiang-dong  ZHOU Yin-gui  WANG Xiao  YAO Chuan-rong  HONG Yi-lin  FU Shao-jun  XU Chao-yin
Institution:National Synchrotron Radiation Laboratory, University of Science and Technology of China, He f ei 230029, China
Abstract:The characteristics of a large scale ion beam etcher with a radio frequency linear source were described. With a 6 cm × 66 cm rectangular beam which the substrate carriage traverses back and forth, an area as large as 40 cm×40 cm can be covered. According to the illustration of the operating principle, construction features of the etcher, commissioning results and technical performance were presented. Measurements with a scanning Faraday-cup based on current probe were used to optimize the ion beam spatial uniformity. A ±5.3% uniformity of current density along the major axis of the ion source was achieved. Etching experiments show a good uniformity of ±5.4% of etching depth over the 40 cm. The uniformity can be improved combined with beam revising by beam diaphragm and correction mask. Through the measurement of beam current stability, performance of the system was also taken into account.
Keywords:ion bean etcher  radio frequency linear ion beam source  beam current density uniformity  beam diaphragm  large aperture diffraction optical elements
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