A MESFET variable-capacitance analytical model |
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Authors: | Xiaowei Sun Jinsheng Luo Zongming Zhou Jinrong Cao Jinting Lin |
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Institution: | (1) Department of Electronic Engineering, Xi’an Jiaotong University, 710049 Xi’an, China;(2) Nanjing Electronic Devices Institute, 210016 Nanjing, China |
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Abstract: | Conclusion A variable-capacitance model suitable for MMIC active voltage-controlled filter has been reported. The analytical expression
is also given for the gate capacitance as a function of the gate bias. Since the free carrier move in active region for contributing
to the gate capacitance is considered, the results calculated from the new model are in agreement with the experimental results.
Hence, the new model is very useful for determining voltage-tuning bandwidth in MMIC active filter or MMIC VCO’s. |
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Keywords: | MMIC GaAs MESFET variable-capacitance model free carrier move |
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