首页 | 本学科首页   官方微博 | 高级检索  
     


Investigation on resist development rate model for synchrotron radiation X-ray lithography
Affiliation:XIE Changqing CHEN Mengzhen WANG YulingSUN Baoyin ZHOU Shenghui(Microelectron R & D Centre, Chinese Academy of Sciences, Beijing 100010, China)and ZHU Zhangzhen(Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China)
Abstract:
Keywords:synchrotron radiation X-ray lithography  resist development rate model  Marquardt method.
点击此处可从《科学通报(英文版)》浏览原始摘要信息
点击此处可从《科学通报(英文版)》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号