复杂多层结构的二次离子质谱定量深度分析

讨论了用ＣＡＭＥＣＡＩＭＳ－４ｆ型二次离子质谱仪对ＡｌｘＧａ１－ｘＡｓ复杂多层结构定量深度分析的方法。采用ＣｓＭ＋技术，完成了无外部参考物质ＡｌｘＧａ１－ｘＡｓ基体成分定量分析，提出并实验验证了一种新的变溅射速率深度校准方法，详细讨论了复杂基体中对杂质进行定量分析时二次离子类型的选择，还尝试了在缺乏足够参考物质时杂质含量的实验估算。实现了二次离子质谱（ＳＩＭＳ）对复杂多层结构的定量分析，同时得到了主成分和杂质的定量深度分布，并保持了ＳＩＭＳ的优良深度分辨本领。

Quantitative SIMS depth profiling for complex multilayers

The quantitative depth profiling methods of Al x Ga 1- x As complex multilayers using CAMECA IMS 4f SIMS (secondary ion mass spectrometer) have been discussed. By the use of CsM technique, the compositional analysis of matrix elements has been completed, even without external reference materials. A new depth scale calibration method using the varied sputtering rate has been put forward and experimentally proven. The choice of the suitable secondary ions for the impurity quantitative analysis in the complex multilayers has been discussed in details. Experimental evaluation of impurity has been tried when it is deficient in enough reference materials. SIMS quantitative analysis of complex multilayers has been realized. Consequently, the quantitative depth profiling results of both matrix elements and impurities have been achieved by the same instrument, and the high depth resolution is held as well.