GaAs/AlxGa1-xAs对称耦合双量子阱中激子结合能的压力效应

考虑三元混晶效应,采用变分法讨论GaAs/AlxGa1-xAs对称耦合双量子阱中激子结合能的压力效应,并计算激子结合能随阱宽和中间垒宽的变化关系以及Al组分的影响.结果表明,激子结合能随阱宽的增加先增加至极大,随后减小;随垒宽则先减小到极小,随后增加.结合能随压力则近线性增加,且当阱宽较宽时,Al组分对结合能的影响不明显.

Pressure Effect on the Binding Energies of Excitons in Symmetrically Coupled Double Quantum Wells of GaAs/AlxGa1-xAs

A variational method is adopted to investigate the binding energies of excitons and pressure effect in symmetrically coupled double quantum wells of GaAs/Al_xGa_(1-x) As by considering the effect of the ternary mixed crystal. The variations of binding energies dependent on the width of the wells and the middle barrier as well as the influence from Al component are also calculated. The numerical results indicate that the binding energies increase to a maximum then decrease with increasing the well width; on the other hand,as the barrier width increases,the binding energies decrease to a minimum then increase. Furthermore, the binding energies approximately linearly increase with pressure. The influence from Al component is unconspicuous for a larger well width.