| 正背栅SOI-MOSFET二维阈值电压解析模型 |
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| 引用本文： | 张国和,邵隽,陈婷.正背栅SOI-MOSFET二维阈值电压解析模型[J].世界科技研究与发展,2012,34(1):29-34. |
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| 作者姓名： | 张国和 邵隽 陈婷 |
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| 作者单位： | 西安交通大学电信与信息工程学院,西安,710049 |
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| 摘 要： | 通过建立沟道区域和埋氧区域的二维泊松方程,并考虑衬底区域的掺杂和背栅偏压对器件阈值电压的影响,得到了一种正背栅全耗尽SOI-MOSFET二维阈值电压模型.根据模型计算结果,研究了衬底掺杂浓度和衬底(背栅)偏压对器件阈值电压的影响,通过与MEDICI数值模拟结果的比较表明,该模型能预计不同衬底掺杂浓度和衬底(背栅)偏压对阈值电压的影响,正确反映器件的短沟效应和背栅效应.
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| 关 键 词： | 全耗尽SOI-MOSFET 背栅电压 阈值电压解析模型 |
2-D Threshold Voltage Model of Front-back Gate Controlled SOI-MOSFET |
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| ZHANG Guohe
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SHAO Jun
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CHEN Ting.2-D Threshold Voltage Model of Front-back Gate Controlled SOI-MOSFET[J].World Sci-tech R & D,2012,34(1):29-34. |
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| Authors: | ZHANG Guohe SHAO Jun CHEN Ting |
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| Institution: | (College of Telecom and Information Engineering, Xi＇an Jiaotong University, Xi＇an 710049 ) |
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| Abstract: | Establishing a 2-D Poisson equation at channel and buried oxygen region, and considering the doping concentration and voltage bias in the substrate, a two dimensional （2D） threshold voltage model of front-back gate controlled fully depleted SOI-MOSFET is presented. Based on the results of the model, the influences of substrate doping concentration and substrate bias （ back-gate bias） on threshold voltage are analyzed. According to the comparison between the model and MEDICI simulation results, the dependence of threshold voltage on substrate doping concentration and back gate bias for short-channel fully-depleted SOI-MOSFET can be forecast. |
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| Keywords: | FD-SOI-MOSFET back-gate bias threshold voltage model |
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