Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part Ⅰ Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model |
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Affiliation: | 1. Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China;2. Applied Science School, University of Science and Technology Beijing, Beijing, 100083, China |
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Abstract: | The growth of {100} oriented CVD (Chemical Vapor Deposition)diamond film under Joe-Badgwell-Hauge (J-B-H) model is simulated at atomic scale by using revised KMC (Kinetic Monte Carlo) method. The results show that: (1) under Joe's model, the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature; (2) the deposition rate and surface roughness () under Joe's model are influenced intensively by temperature ()and not evident bymass fraction of atom chlorine; (3)the surface roughness increases with the deposition rate, i.e. the film quality becomes worse with elevated temperature, in agreement with Grujicic's prediction; (4) the simulation results cannot make sure the role of single carbon insertion. |
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Keywords: | CVD diamond film KMC method atomic scale simulation atom Cl |
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