Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature-Part II Simulation of CVD diamond film growth in C-H system and in Cl-containing systems |
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Affiliation: | 1. Materials Science and Engineering School, University of Science & Technology Beijing, Beijing 100083, China;2. Applied Science School, University of Science & Technology Beijing, Beijing 100083, China |
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Abstract: | The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale. The results were compared both in Cl-containing systems and in C-H system as follows: (1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3) {100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagrees with the predictions before; (4) The explanation of the exact role of atomic Cl is not provided in the simulation results. |
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Keywords: | CVD diamond film atomic Cl revised KMC (Kinetic Monte Carlo) method atomic scale simulation |
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