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太阳能级硅片化学清洗技术进展
引用本文:周小英.太阳能级硅片化学清洗技术进展[J].新余高专学报,2011,16(6):92-94.
作者姓名:周小英
作者单位:新余学院新能源科学与工程学院,江西新余,338004
摘    要:介绍了硅片表面污染物的种类、来源及形成机理,论述了太阳能级硅片传统的RCA清洗技术中各种清洗液的清洗原理和优缺点,同时对改进的RCA清洗、HF/O3和电化学清洗等新型湿化学清洗技术进行了阐述,指出了太阳能级硅片化学清洗技术的发展方向。

关 键 词:光伏  硅片  湿化学  清洗

The Evolution of Chemical Cleaning Technique on SOG Silicon Wafer
Zhou Xiao-ying.The Evolution of Chemical Cleaning Technique on SOG Silicon Wafer[J].Journal of XinYu College,2011,16(6):92-94.
Authors:Zhou Xiao-ying
Institution:Zhou Xiao-ying(Xinyu College,Xinyu 338000 China)
Abstract:The paper introduces the type,origin and formation mechanism of contaminants on the solar grade(SOG) silicon wafer surfaces.It summarizes the cleaning principle,advantages and disadvantages of some traditional cleaning solutions.The paper also introduces some new wet chemical cleaning technologies such as HF/O3 and electrochemical cleaning technique,pointing out the developing tendency of the SOG silicon wafer cleaning technique.
Keywords:photovoltaic  silicon  wet chemistry  cleaning
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