| 一种带隙基准源设计研究 |
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| 引用本文： | 刘志国,戴澜. 一种带隙基准源设计研究[J]. 科技信息, 2012, 0(1): 232-232,191 |
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| 作者姓名： | 刘志国 戴澜 |
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| 作者单位： | [1]北京航星机器制造公司,中国北京100013 [2]北方工业大学信息学院微电子系,中国北京100144 |
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| 摘 要： | 带隙基准源在各种芯片中应用广泛，很多电子系能的性能直接受基准源的影响。论文提出一种采用电阻修整的带隙基准源的设计方法，通过修整来调节基准源由于受工艺等因素影响而产生的偏差，仿真结果表明．在-50℃到130℃温度范围．基准源的电压偏差为2mV。
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| 关 键 词： | 带隙基准 温度系数 电源抑制比 |
Research for Band-gap Reference |
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| LIU Zhi-guo DAI Lan. Research for Band-gap Reference[J]. Science, 2012, 0(1): 232-232,191 |
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| Authors: | LIU Zhi-guo DAI Lan |
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| Affiliation: | LIU Zhi-guo DAI Lan (1.Beijing Hangxing Machinery Manufacturing Corporation, Beijing, 100013, China; 2.College of Information Engineering, North China University of China, Beijing, 100144, China) |
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| Abstract: | Band-gap reference is widely applied in many kinds of chip, and it even ＂affects the performance of these electronics system directly. The paper presents a band-gap trimmed by some resistors, through the technique of trim the error caused by VLSI process is decreased, the simulation results show deviation of the voltage reference is only 2mV with the temperature changing from -50℃ to 130℃. |
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| Keywords: | Band-gap Temperature coefficient Power supply rejection ratio |
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