| 辉光功率对硅薄膜太阳能电池串联电阻的影响 |
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| 引用本文： | 石明吉,于家辉,陈兰莉,丁淑娟.辉光功率对硅薄膜太阳能电池串联电阻的影响[J].南阳理工学院学报,2010,2(2):1-4. |
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| 作者姓名： | 石明吉 于家辉 陈兰莉 丁淑娟 |
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| 作者单位： | 南阳理工学院电子与电气工程系,河南,南阳,473004 |
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| 基金项目： | 河南省基础与前沿基础研究项目，南阳市科技发展计划资助项目，河南省青年骨干教师资助计划项目 |
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| 摘 要： | 采用RF—PECVD在不锈钢衬底上制备了一系列NIP结构的硅薄膜太阳能电池，得到本征层的辉光功率分别是4W，7．2W，9W，20W，40W。用磁控溅射在P层表面蒸镀ITO透明电极，用太阳能模拟器做光源，测试了电池的串联电阻等性能参数。结果表明本征层辉光功率对电池串联电阻的影响显著。在相同条件下制备了本征单层膜系列样品并进行表征。通过对薄膜性质的分析，运用三相混合模型和渗流理论解释了串联电阻随本征层辉光功率变化的原因。
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| 关 键 词： | 太阳能电池 辉光功率 硅薄膜 渗流理论 |
THE INFLUENCE OF DISCHARGE POWER TO THE SERIES RESISTANCE OF SILICON THIN FILM SOLAR CELLS |
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| SHI Ming-ji,YU Jia-hui,CHEN Lan-li,DING Shu-juan.THE INFLUENCE OF DISCHARGE POWER TO THE SERIES RESISTANCE OF SILICON THIN FILM SOLAR CELLS[J].Journal of Nanyang Institute of Technology,2010,2(2):1-4. |
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| Authors: | SHI Ming-ji YU Jia-hui CHEN Lan-li DING Shu-juan |
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| Institution: | ( Department of Electronics and Electrical Engineering, Nanyang Institute of Technology, Nanyang 473004, China ) |
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| Abstract: | A series of NIP a -Si：H thin film solar cells were deposited on stainless steel substrates in a three -chamber RF -PECVD system. The intrinsic layer discharge powers were 4W, 7.2W, 9W, 20W and 40W respectively. Then ITO transparent electrodes were deposited on the P layers by magnetron sputtering. A solar simulator was used as the light source to test the series resistance and other parameters of the cells. The result showed that the discharge power affect the series resistance predominantly. To explain this, a series of intrinsic layer thin film samples were fabricated under the same discharge powers and were also characterized. The three - phase model and the percolation theory were used to explain the dependence of series resistance on discharge power. |
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| Keywords: | Solar cell Discharge power Silicon thin film Percolation theory |
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