| X射线透视对MOS电容性能的影响 |
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| 引用本文： | 王胜林,吴鹏,李斌.X射线透视对MOS电容性能的影响[J].陕西师范大学学报,2005(Z1). |
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| 作者姓名： | 王胜林 吴鹏 李斌 |
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| 作者单位： | 陕西警官职业学院计算机系 西北大学物理学系 空军工程大学理学院 陕西 西安 陕西 西安 |
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| 摘 要： | MOS电容在计算机电路中有着广泛的应用,受X射线辐射后的平带电压和阀电压的飘移,对计算机性能的稳定有着很大的影响.作者利用SOFRON-1505C型X光机,对3种MOS电容CD130,CE28,CG28受X射线后的平带电压和阀电压的飘移量进行测试和分析,从而分析X射线辐射对MOS电容的影响.
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| 关 键 词： | X射线 MOS电容 平带电压 |
Effect of X-radiographic inspection on the performance of MOS capacitor |
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| WANG Sheng-lin,WU Peng,LI Bin.Effect of X-radiographic inspection on the performance of MOS capacitor[J].Journal of Shaanxi Normal University: Nat Sci Ed,2005(Z1). |
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| Authors: | WANG Sheng-lin WU Peng LI Bin |
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| Abstract: | MOS capacitors are used widely in computer circuits. The drifts of flat band voltage and threshold voltage in circuits affect the stability of computer performance very much. The drift level of flat band voltage and threshold voltage were measured by SOFRON-1505C model X-ray device after X-ray radiating three kind MOS capacitors CD130, CE28, CG28. The effect of X-ray irradiation on MOS capacitors was analyzed. |
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| Keywords: | X-Ray MOS capacitor flat band voltage |
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