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单片集成正装结构的GaAlAs/GaAs激光器的热阻特性
引用本文:赵方海,胡礼中,苏士昌,刘式墉. 单片集成正装结构的GaAlAs/GaAs激光器的热阻特性[J]. 吉林大学学报(理学版), 1989, 0(3)
作者姓名:赵方海  胡礼中  苏士昌  刘式墉
作者单位:吉林大学电子科学系(赵方海,胡礼中,苏士昌),吉林大学电子科学系(刘式墉)
摘    要:本文利用二维热流模型,计算了适于单片集成正装结构GaAlAs/GaAs激光器的热阻,讨论了各种参数对热阻的影响。此外,还采用正向压降法测量了不同腔长激光器的热阻,并与理论曲线进行了比较。

关 键 词:热阻  半绝缘衬底  正装  正向电压法

Thermal Resistance Characteristics of Monolithic Integrated GaAlAs/GaAs Laser with SI-substrate Junction-Up Mounting Structure
Zhao Fanghai,Hu Lizhong,Su Shichang,Liu Shiyong. Thermal Resistance Characteristics of Monolithic Integrated GaAlAs/GaAs Laser with SI-substrate Junction-Up Mounting Structure[J]. Journal of Jilin University: Sci Ed, 1989, 0(3)
Authors:Zhao Fanghai  Hu Lizhong  Su Shichang  Liu Shiyong
Abstract:The thermal resistance of the junction-up mounting structure GaAlAs/GaAs laser applying to the monolithic integration was calculated with the two dimension thermal flowing model. The effects of a variety of parameters on the thermal resistance were discussed. In addition, the thermal resistances of the devices with different cavity lengths were measured by using positive-going voltage method and compared with the theoretical curve.
Keywords:thermal resistance  SI-substrate  junction-up mounting  positive-going voltage method.
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