门极换向晶闸管阳极透过率的优化设计

采用数值模拟方法研究了缓冲层和透明阳极的结构参数对阳极透过率的影响.结果表明:透明阳极在较小的电流密度情况下具有较低的透过率,随着电流密度的增大透过率显著提高,即透明阳极的透过率依赖于阳极的电流密度;降低透明发射极或提高缓冲层掺杂水平,透过率也会提高;减小阳极的结深,透过率也会提高.因此,可以通过恰当地选择缓冲层和透明阳极的结构参数来调整阳极透过率,使之达到期望值,进而提高器件的关断性能.

Optimal Design of Transparency of Anode Emitter in Gate Commutate Thyristor

Numerical simulations have been employed to investigate the effect of the material parameters of the buffer layer and transparent emitter on the transparency of the transparent emitter of gate commutate thyristor. The results obtained show that the transparent emitter is a p-n junction with the transparency depending on the current density. The transparency is low at lower current density while it drastically increases with the current density. With the doping level increasing of the buffer layer or decreasing of the transparent emitter under the condition that keeping other parameters constant, the transparency increases. And the transparency becomes larger when the junction depth of transparent emitter width decreases. Based on the simulation results, the transparency can be controlled and adjusted to the desired level by varying the material parameters of the buffer layer and transparent emitter properly.