| AlN/GaN量子阱中光学声子所限制的电子迁移率 |
| |
| 引用本文： | 贾秀敏,班士良. AlN/GaN量子阱中光学声子所限制的电子迁移率[J]. 河南师范大学学报(自然科学版), 2011, 39(3): 64-67,71 |
| |
| 作者姓名： | 贾秀敏 班士良 |
| |
| 作者单位： | 1. 内蒙古科技大学,数理与生物工程学院,内蒙古包头014010
2. 内蒙古大学,理工学院,呼和浩特010021 |
| |
| 基金项目： | 国家自然科学基金理论物理专项，内蒙古科技大学创新基金 |
| |
| 摘 要： | 在介电连续模型和单轴模型的框架下,采用雷-丁平衡方程理论,考虑量子阱中界面光学声子模和局域体光学声子模的影响,分别计算了纤锌矿型和闪锌矿型AlN/GaN量子阱中电子平行于异质结界面方向的迁移率,给出迁移率随阱宽的变化关系,并讨论了结构各向异性效应对电子迁移率的影响.
|
| 关 键 词： | 迁移率 光学声子模 量子阱 纤锌矿 闪锌矿 AlN/GaN |
Electron Mobility in AlN/GaN Quantum Wells Limited by Optical Phonon |
| |
| JIA Xiu-min,BAN Shi-liang. Electron Mobility in AlN/GaN Quantum Wells Limited by Optical Phonon[J]. Journal of Henan Normal University(Natural Science), 2011, 39(3): 64-67,71 |
| |
| Authors: | JIA Xiu-min BAN Shi-liang |
| |
| Affiliation: | 1.College of Mathematical Physics and Biological Engineering,Inner Mongolia University of Science and Technology,Baotou 014010,China;2.College of Sciences and Technology,Inner Mongolia University,Hohhot 010021,China) |
| |
| Abstract: | Based on the dielectric continuum phonon model,uniaxial model and force balance equation,the electronic mobility parallel to the interfaces of wurtzite and zincblende AlN/GaN quantum-wells(QWs) is discussed in consideration of the scattering from the confined and interface optical phonon modes.The dependence of the mobility on the well width is presented.In addition,the influence of structure anisotropy effec on electron mobility is discussed. |
| |
| Keywords: | mobility optical phonon mode quantum well wurtzit zincblende AlN/GaN |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
