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硅球密度绝对测量
引用本文:罗志勇,赵克功,张继涛,陈赤.硅球密度绝对测量[J].科学通报,2012(15):1281-1289.
作者姓名:罗志勇  赵克功  张继涛  陈赤
作者单位:中国计量科学研究院;清华大学精密仪器与机械学系
基金项目:国家科技支撑计划(2006BAF06B06)资助
摘    要:单晶硅球密度的绝对测量是阿伏加德罗常数测量的关键技术,是目前国际热点研究领域.本文综述了包括我国在内的国际单晶硅球密度测量的最新进展,涉及硅球密度测量的技术原理、测量领域、影响因素、测量装置及最佳测量能力等,分析了硅球密度测量的主要难点和关键技术,预测了相关研究的技术前景及发展趋势.

关 键 词:阿伏加德罗常数  硅球密度  相移干涉法  氧化层厚度  精密测量

Absolute density determination for a single crystal silicon sphere
LUO ZhiYong,ZHAO KeGong,ZHANG JiTao,& CHEN Chi.Absolute density determination for a single crystal silicon sphere[J].Chinese Science Bulletin,2012(15):1281-1289.
Authors:LUO ZhiYong  ZHAO KeGong  ZHANG JiTao  & CHEN Chi
Institution:1 National Institute of Metrology,Beijing 100013,China;2 Department of Precision Instruments and Mechanology,Tsinghua University,Beijing 100084,China
Abstract:The absolute density measurement of the single crystal silicon sphere is decisive procedure to determine Avogadro constant.In this review paper,we introduced the current status of the density measurement of the single crystal silicon sphere,including measurement principles,measurement fields,influence factors,measuring devices and the best ability for the diameter measurement,analyzed the main difficulties and key technologies of density measurement,and predicted the development trend and technology prospect in related fields.
Keywords:Avogadro constant  density of silicon sphere  phase-shifting interferometry  oxide layer thickness  precision measurement
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