(1) Department of Physics, Peking University, 100871 Beijing, China
Abstract:
The Raman spectra of two one-dimensional silicon nanowire samples with different excitation wavetengths were measured and
an abnormal phenomenon was discovered that the Raman spectral features change with the wavetengths of excitation. Closer analysis
of the crystalline structure of samples and the changes in Raman spectral features showed that the abnormal behavior is the
result of resonance Raman scattering setection effect.