用开路电压法测晶体硅太阳电池少子寿命的研究

根据太阳电池的工作原理,详细论述了用脉冲光源照射n/p结太阳电池瞬间时,由于光电压,即开路电压的建立,将有电子从n区通过n/p结向p区边界注入,这些注入p区的过剩电子(少子)在运动中复合所需的时间,我们定义为少子寿命.理论上给出了注入p区的电子复合带来的开路电压与寿命的关系式(Voc(t)),同时也研究了n/p结势垒电容放电对Voc(t)的影响.因此建议使用开路电压随时间的衰减关系式(Voc(t))测量少子寿命的方法.

Measurement of the Lifetime of Minority Carrier in Crystal Silicon Solar-cell By Open-circuit Voltage Decay

According to the operating principle of solar cell,it is dealt with in detail that when n-p junction of solar cell is irradiated with pulse light-source in a instantaneous time,there will be electrons injecting into the boundary of p zone via n-p junction from n zone,because of emerging of photo-voltage(ie.open-circuit voltage).These excess electrons injecting into p zone synthesize in motion.The time what the synthesis needs is defined as the lifetime of minority carrier.Theoretically,the relational expression(V_(oc)(t)) between open-circuit voltage and minority carrier lifetime,which is brought about by the synthesis of electrons injecting into p zone,is presented; meantime, it is also studied what the barrier capacitance discharge of n-p junction has an influence on the open circuit-voltage.Thus it is suggested that the lifetime of minority carrier should be measured by the relationship (V_(oc)(t)) that open-circuit voltage decays with time.