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半导体PN结温度特性实验
引用本文:周党培,陈业仙. 半导体PN结温度特性实验[J]. 实验室科学, 2012, 15(1): 100-103,107
作者姓名:周党培  陈业仙
作者单位:1. 五邑大学物理实验中心
2. 五邑大学教务处,广东江门,529020
摘    要:讨论了不同温度下PN结的正向压降和伏安特性的测量方法,设计了利用TH-J型PN结正向压降温度特性测试仪研究PN结正向压降及伏安特性曲线随温度变化的实验,定性分析了PN结正向压降及伏安特性随温度变化的规律;利用Excel进行曲线拟合测定了正向压降随温度变化的灵敏度、玻尔兹曼常数以及PN结的反向饱和电流,从而定量描述了PN结的伏安特性,取得了较为准确的实验结果。

关 键 词:PN结  伏安特性  波尔兹曼常数  反向饱和电流  物理实验

Experiment of temperature characteristics of PN junction
ZHOU Dang-pei , CHEN Ye-xian. Experiment of temperature characteristics of PN junction[J]. Laboratory Science, 2012, 15(1): 100-103,107
Authors:ZHOU Dang-pei    CHEN Ye-xian
Affiliation:1. Physics Laboratory Centre, Wuyi University ; 2. Dean' Office, Wuyi University, Jiangmen 529020, China)
Abstract:The measuring means of positive voltage drop and volt-ampere characteristics of PN junction at different temperature is introduced, and the experiment of variation of positive voltage drop and volt-ampere characteristics of PN junction with temperature based on the instrument of model TH-J which is used to research the relation of PN junction forward voltage drop and temperature is designed. The response rate between positive voltage drop and temperature, Boltzmann constant and the reverse saturation current of the PN junction are measured. The positive volt-ampere characteristics of PN junction and its variation with temperature can be described quantitatively and qualitatively, and the good experiments results are reached.
Keywords:PN junction  voh-ampere characteristics  the reverse saturation current  physical experiment
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