| NEA光电阴极电子表面逸出几率的计算和应用 |
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| 引用本文： | 宗志园,钱芸生,富容国,常本康. NEA光电阴极电子表面逸出几率的计算和应用[J]. 南京理工大学学报(自然科学版), 2002, 26(6): 641-644,669 |
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| 作者姓名： | 宗志园 钱芸生 富容国 常本康 |
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| 作者单位： | 南京理工大学电子工程与光电技术学院,南京210094 |
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| 摘 要： | 该文介绍了计算NEA光电阴极电子表面逸出几率的新方法，选用双偶极层表面模型，计算了GaAs:Cs-O NEA光电阴极的电子表面逸出几率，比较了2种双偶极层模型的异同点，计算结果显示电子表面逸出几率受第一偶极层的影响较大，并粗略推测了该偶极层的厚度。
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| 关 键 词： | NEA 电子表面逸出几率 计算 光电阴极 偶极子 双偶极层模型 光电子学 |
Calculation of Electron Surface Escape Probability of NEA Photocathodes and Its Application |
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| ZongZhiyuan QianYunsheng FuRongguo ChangBenkang. Calculation of Electron Surface Escape Probability of NEA Photocathodes and Its Application[J]. Journal of Nanjing University of Science and Technology(Nature Science), 2002, 26(6): 641-644,669 |
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| Authors: | ZongZhiyuan QianYunsheng FuRongguo ChangBenkang |
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| Abstract: | A new way of calculating electron surface escape probability of NEA photocathode is introduced. Double dipole model is used to calculate the electron surface escape probability of GaAs:Cs-O NEA photocathode.Two double dipole models are compared.It is shown from the calculated results that the electron surface escape probability is mainly affected by the first dipole layer,and the width of this layer is inferred roughly. |
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| Keywords: | photocathodes electrons probability dipoles |
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