Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition |
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| Authors: | WU ChaoMin SHANG JingZhi ZHANG BaoPing ZHANG JiangYong YU JinZhong & WANG QiMing |
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| Affiliation: | WU ChaoMin1,SHANG JingZhi1,ZHANG BaoPing1,2,ZHANG JiangYong1,3,YU JinZhong1,3 & WANG QiMing1,3 1 Department of Physics , Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China,2 Pen-Tung Sah Micro/Nano Technology Research Center,3 State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 |
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| Abstract: | We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophoto- meter. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickn... |
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| Keywords: | MOCVD DBR high-reflectivity nitride |
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