| 微型薄膜磁阻传感元件的磁畴和畴壁状态的转变过程 |
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| 引用本文： | 余晋岳,宋柏泉.微型薄膜磁阻传感元件的磁畴和畴壁状态的转变过程[J].上海交通大学学报,1996,30(7):95-99. |
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| 作者姓名： | 余晋岳 宋柏泉 |
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| 作者单位： | 信息存储研究中心 |
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| 基金项目： | 兰州大学应用磁学研究开放实验室部分资助 |
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| 摘 要： | 用Ｂｉｔｅｒ粉纹技术研究了长×宽为４０μｍ×３００μｍ，厚度为４０ｎｍ的微型ＮｉＦｅ磁阻元件，在难轴方向反磁化过程中曲折状磁畴的转变过程，观察和分析了曲折状畴形成、Ｎｅｅｌ壁合并、封闭畴和钩形畴转变及Ｎｅｅｌ壁状态转变等一系列过程
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| 关 键 词： | 磁阻传感元件 磁畴 畴壁 反磁化 |
The Transition Process of Magnetic Domains and Domain Wall State in Small Thin Film Magnetoresistive Elements |
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| Yu Jinyue,Song Baiquan,Zhou Yong,Cai Binchu.The Transition Process of Magnetic Domains and Domain Wall State in Small Thin Film Magnetoresistive Elements[J].Journal of Shanghai Jiaotong University,1996,30(7):95-99. |
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| Authors: | Yu Jinyue Song Baiquan Zhou Yong Cai Binchu |
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| Institution: | Information Storage Research Center |
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| Abstract: | In this paper, the irreversible transition process of buckling magnetic domains during magnetization reversal along the hard axis direction in small magnetorsistive elements has been investigated. The formation of buckling domains, Neel wall merging, transition of closured domains and hooked domains, and Neel wall state transition were observed and analysed systematically. |
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| Keywords: | magnetoresistive element magnetic domain domain wall magnetization reversal |
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