一个2.4 GHz集成的SP3T射频开关和低噪声放大器

基于90 nm SOI CMOS工艺实现的应用于无线局域网的2.4 GHz集成的单刀三掷（SP3T）射频开关和低噪声放大器.射频开关采用了一种低功耗的等效负压偏置方法,该方法能够在不使用负电压的前提下使关断状态晶体管获得等效的负压偏置,从而提高射频开关的线性度.低噪声放大器采用了负反馈技术和导数叠加技术提高线性度,利用导数叠加技术减小低噪声放大器的三阶非线性,进一步提高了负反馈低噪声放大器的线性度.低噪声放大器与射频开关集成,并带有Bypass衰减通路.测试结果表明,射频开关的发射支路实现了0.95 dB的插入损耗和34 dBm的输入1 dB压缩点,蓝牙支路具有1.68 dB的插入损耗和30 dBm的输入1 dB压缩点.在2 V供电下,接收支路在高增益模式下具有15.8 dB的增益,1.7 dB的噪声系数和7.6 dBm的输入三阶交调点,功耗28.6 mW,在Bypass模式下具有7.2 dB的插入损耗和22 dBm的输入三阶交调点.

A 2.4 GHz Integrated SP3T RF Switch and Low Noise Amplifier

A 2.4 GHz integrated single pole three throw （SP3T） radio frequency （RF） switch and low noise amplifier based on a 90 nm SOI CMOS process is designed for wireless local area network （WLAN） applications. The RF switch adopts a low-power equivalent negative voltage biasing method, which can make the off-state transistors obtain an equivalent negative voltage bias state without using negative voltage, thereby improving the linearity of the RF switch. The low noise amplifier uses the negative feedback technique and derivative superposition technique to improve its linearity, and the derivative superposition technique is used to reduce the third-order non-linearity of the low noise amplifier, which further improves the linearity of the negative feedback low noise amplifier. The low noise amplifier is integrated with the RF switch and has a Bypass attenuation path. The measurement results show that the transmitting branch of the RF switch has an insertion loss of 0.95 dB and an input 1 dB compression point of 34 dBm, and the Bluetooth branch of the RF switch has an insertion loss of 1.68 dB and an input 1 dB compression point of 30 dBm. Under 2 V power supply, in the high gain mode, the receiving branch has a gain of 15.8 dB, a noise figure of 1.7 dB and an input third-order intercept point of 7.6 dBm, and a power consumption of 28.6 mW, while in the bypass mode, it has 7.2 dB insertion loss and an input third-order intercept point of 22 dBm.