低能电子束光刻的Monte Carlo模拟

利用Mott截面和介电函数模型,借助Monte Carlo方法模拟了电子在光刻胶PMMA和衬底中的弹性散射和非弹性散射.通过统计电子的能量沉积分布,发现低能电子的大部分能量沉积在光刻胶中而非衬底,所以在电子束光刻中有着更高的效率.并且还得到了在不同的入射电子能量下,光刻胶完全曝光所对应的的最佳厚度.

Monte Carlo Simulation of low-energy Electron Beam Lithography

The Monte Carlo method on low-energy electron scattering in PMMA and substrate is used.The Mott cross-section applies for describing the elastic scattering,and the dielectric function method to describe inelastic scattering.Through simulating electrons scattering progress and deposited energy distribution,the authors found that the low-energy electron beam is the evident mode of exposure, because low-energy electrons lost a large part of energies in PMMA.In addition the optimized thickness of PMMA is obtained in different energies of incident electron.