基于光敏玻璃的垂直互连通孔仿真与电镀工艺研究

本文对玻璃通孔与硅通孔垂直互连结构进行了电磁场仿真，并对比了两者的高频传输特性，结果显示在20GHz处，玻璃通孔与硅通孔的插入损耗分别为-0.024dB和-1.62dB，玻璃通孔的高频传输性能明显优于硅通孔.基于光敏玻璃衬底，采用高刻蚀速率的湿法腐蚀方法，获得了深宽比为7:1的玻璃通孔，孔阵列均匀性良好，侧壁粗糙度小于1μm.对不同电流密度下的玻璃通孔填充工艺进行了仿真分析，结果显示在小电流密度下，开口处的电流密度拥挤效应改善明显，铜层生长速度更为均匀，但沉积速度较慢.基于仿真结果，进行了电流密度为1ASD下的通孔填充实验研究，结果显示填充效果良好，120μm的TGV中铜层生长均匀，70μm的TGV中的缝隙较小. 

Formation and Metallization Process Study on High Aspect Ratio Through-Glass-Via (TGV) Within Photosensitive Glass

The electromagnetic simulations of through glass via (TGV) and through silicon via (TSV) were performed in this paper.Simulated results show that the insertion losses of TGV and TSV at 20 GHz are-0.024 dB and-1.62 dB respectively,representing a much higher performance of TGV.Based on photosensitive glass,7:1 high aspect ratio of TGV was obtained by using high speed wet etching method,achieving better array profile,uniformity and less 1μm roughness of TGVs.Filling process was simulated under different current densities.Results show that smaller current density is helpful to achieve uniform filling due to the improvement of crowding effect of current density at the top and bottom of TGVs,the development speed of copper layer is more uniform and slow.A verification filling experiments were carried out under the current density of 1ASD.Results show a high filling quality,copper layer develops uniformly in 120 μm TGVs,the seams are small in 70 μm TGVs.