球形GaAs-Ga1-xAlxAs量子点中激子束缚能的变分法计算

用无限深势阱和有限深势阱2种模型，计算了激子束缚能与球形量子点半径的关系.计算结果表明：对于无限深势阱模型，量子点中激子束缚能随着量子点的半径增加而减小；对于有限深势阱模型，当量子点半径较小时，束缚能随着量子点的半径增加而增加；当量子点半径增加到一定值时，它的束缚能达到最大值，继续增加量子点半径，束缚能反而减少.这些计算结果对深入理解半导体量子点中激子的物理本质具有一定学术意义.

Calculation of the Binding Energy of Ecitons in Spherical GaAs-Ga1-xAlxAs Quantum Dots by Variational Approach

The relation between the exciton binding energy and the spherical quantum dot radius  has been calculated using the variational method.Calculations were performed using both the infinite and finite confining potential well model.The results show that the exciton binding energy decreases as the dot radius increases for infinite confining well model.For the finite confining well model,the binding energy reaches a peak value as the dot radius increases and then decreases to a limiting value corresponding to that in the barrier material.These results are important for the study of the physical properties of exciton in quantum dot.