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附加电极半径对空心圆管端点附近离子注入剂量的影响
引用本文:刘成森,郭南南,霍伟刚.附加电极半径对空心圆管端点附近离子注入剂量的影响[J].辽宁师范大学学报(自然科学版),2007,30(1):41-45.
作者姓名:刘成森  郭南南  霍伟刚
作者单位:辽宁师范大学,物理与电子技术学院,辽宁,大连,116029
摘    要:在带有共轴零电位附加电极的空心圆管等离子体源离子注入过程中,附加电极半径的大小直接影响到空心圆管端点内表面、端点表面和外表面的离子注入剂量,进而影响空心圆管表面的结构和性质,对空心圆管的不同部位这种影响是不同的.利用无碰撞两维流体动力学模型,研究了有限上升时间的电压脉冲作用下,共轴放置附加零电位的半无限空心圆管端点附近等离子体源离子注入过程中,附加电极半径变化时,空心圆管端点附近离子注入剂量分布随时间的演化规律.计算机模拟结果显示了附加电极半径改变时,空心圆管内部、外部及端点表面处的离子注入剂量分布发生变化.

关 键 词:等离子体源离子注入  附加电板半径  离子注入剂量
文章编号:1000-1735(2007)01-0041-05
修稿时间:2006-07-30

Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation
LIU Cheng-sen,GUO Nan-nan,HUO Wei-gang.Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation[J].Journal of Liaoning Normal University(Natural Science Edition),2007,30(1):41-45.
Authors:LIU Cheng-sen  GUO Nan-nan  HUO Wei-gang
Institution:School of Physics and Electronic, Liaoning Normal University, Dalian 116029, China
Abstract:The auxiliary electrode radius in a vacant circular pipe is crucial to the ion dose in plasma source ion implantation(PSII),because it affects the resultant surface structure and properties.In this paper two-dimensional fluid model is applied to compute the ion dose near the end of a vacant circular pipe by using an auxiliary electrode for finite rise-time voltage pulses.The ion dose distribution is calculated by solving Poisson's equation and the equations of ion motion and continuity by using finite difference methods.Our results indicate that the ion dose on both the inner and outer surfaces and the end surface of the pipe changes with change of the auxiliary electrode radius.
Keywords:PSII  auxiliary electrode radius  ion dose
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