| 退火对CdS薄膜和CdS纳米晶的电学与光学性质的影响 |
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| 引用本文： | 杨一军,杨保华,谢宇.退火对CdS薄膜和CdS纳米晶的电学与光学性质的影响[J].淮北煤炭师范学院学报(自然科学版),2002,23(4):26-30. |
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| 作者姓名： | 杨一军 杨保华 谢宇 |
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| 作者单位： | 淮北煤炭师范学院物理系,安徽,淮北,235000 |
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| 基金项目： | 安徽省教育厅自然科学基金资助项目(2001kj201zc) |
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| 摘 要： | 通过喷雾热解获得CdS薄膜,水热法合成CdS纳米晶,在氮气中做了退火处理,发现CdS膜的吸收边随退火温度升高而移动;经暗电阻与温度关系测试,发现CdS薄膜和纳米晶的激活能存在极小值,用载流子衰减时间的变化很好地解释了其缘由;室温喇曼谱中观察到CdS的两个特征峰.
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| 关 键 词： | CdS薄膜 吸收边 激活能 |
| 文章编号： | 1000-2227(2002)04-0026-05 |
| 修稿时间： | 2002年5月27日 |
Effect of Annealing on Electrical and Optics Properties of CdS Thin Films and Nanocrystals |
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| YANG Yi-jun,YANG Bao-hua,XIE Yu.Effect of Annealing on Electrical and Optics Properties of CdS Thin Films and Nanocrystals[J].Journal of Huaibei Coal Industry Teachers College(Natural Science edition),2002,23(4):26-30. |
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| Authors: | YANG Yi-jun YANG Bao-hua XIE Yu |
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| Abstract: | CdS thin films and CdS nanocrystals were prepared by spray pyrolysis and h ydrothermal methods,respectively.The as-prep ared samples were annealed under nitrogen.The absorption edge of CdS thin film is shifted with annealing temperature elevated in comparison with that of the bulk CdS.The result of dark resistance as function of temperature indicates t hat there is minimal activation energy of as-synthesize d samples.It can be reasonably expla ined by means of the change of carriers' decay-time.Two charac teristic vibrational peaks of CdS we re observed by Raman spectra at room temperature. |
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| Keywords: | CdS thin films optics absorption activation energy |
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