| Local Structure of Ge／SI（100） Self—Assembled Quantum Dots |
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| 引用本文： | Alexander V. Kolobov a) onleavefromA .F .IoffePhysico TechnicalInstitute,StPetersburg,Russia (Joint Research Center for Atom Technology National Institute of Advanced Industrial Science and Technology,Tsukuba Central 4,1 1 1 Higashi,Tsukuba 30. Local Structure of Ge／SI（100） Self—Assembled Quantum Dots[J]. 中国科学技术大学学报, 2001, 31(3): 282-288 |
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| 作者姓名： | Alexander V. Kolobov a) onleavefromA .F .IoffePhysico TechnicalInstitute StPetersburg Russia (Joint Research Center for Atom Technology National Institute of Advanced Industrial Science and Technology Tsukuba Central 4 1 1 1 Higashi Tsukuba 30 |
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| 作者单位： | JointResarchCenterofrAtomTechnology－NationalInstituteofAdvancedIndustrialScienceandTechnology,Tsukuba |
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| 基金项目： | ThisworkwaspartlysupportedbyNEDOandtheEuropeanCommunity (MEL ARIprojectSIBOIANo.2 882 4 )andwasperformedintheJointResearchCent |
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| 摘 要： | Ｔｈｅｌａｔｔｉｃｅｍｉｓｍａｔｃｈｂｅｔｗｅｅｎｔｈｅｓｕｂｓｔｒａｔｅａｎｄｔｈｅｏｖｅｒｇｒｏｗｎｌａｙｅｒａｌｌｏｗｓｔｈｅｆｏｒｍａｔｉｏｎｏｆｓｅｌｆ ａｓ ｓｅｍｂｌｅｄｑｕａｎｔｕｍｄｏｔｓ (ＱＤｓ)ｔｈｒｏｕｇｈｔｈｅＳｔｒａｎｓｋｉ Ｋｒａｓｔａｎｏｖｍｅｃｈａｎｉｓｍ[1,2 ] .Ｔｈｉｓｔｅｃｈｎｉｑｕｅｈａｓｂｅｅｎｓｕｃｃｅｓｓｆｕｌｌｙａｐｐｌｉｅｄｔｏｖａｒｉｏｕｓｓｅｍｉｃｏｎｄｕｃｔｏｒｓｙｓｔｅｍｓ,ａｎｄｉｎｐａｒｔｉｃｕｌａｒｔｏＧｅ/Ｓｉｑｕａｎｔｕｍｄｏｔｓ(Ｑ…
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| 关 键 词： | 自相似 锗量子点 局域结构 EXAFS XANES |
Local Structure of Ge/Si(100) Self-Assembled Quantum Dots |
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| Kolobov.,AV HiroyukiOyanagi. Local Structure of Ge/Si(100) Self-Assembled Quantum Dots[J]. Journal of University of Science and Technology of China, 2001, 31(3): 282-288 |
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| Authors: | Kolobov. AV HiroyukiOyanagi |
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| Abstract: | Local structure of uncapped and Si capped Ge quantum dots grown on Si(100) has been probed by X ray absorption fine structure spectroscopy. It is found that the uncapped Ge dots are partially oxidized and partially alloyed with Si. The amount of Ge present in the Ge phase is found to be about 20 30%. In the Si capped sample, Ge is found to be dissolved in silicon, the fraction of Ge atoms existing as pure Ge phase being not more than 10%. |
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| Keywords: | Ge quantum dots EXAFS XANES |
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