| 外腔法压窄半导体激光器线宽的二阶理论 |
| |
| 引用本文： | 柴燕杰,张汉一,周炳琨,吴群. 外腔法压窄半导体激光器线宽的二阶理论[J]. 清华大学学报(自然科学版), 1990, 0(1) |
| |
| 作者姓名： | 柴燕杰 张汉一 周炳琨 吴群 |
| |
| 作者单位： | 电子工程系(柴燕杰，张汉一，周炳琨)，电子工程系(吴群) |
| |
| 摘 要： | 对耦合于长无源外腔的半导体激光器的线宽行为进行了二阶理论分析，首次得到了 外腔半导体激光器的线宽压窄率随外腔长的增加而出现饱和的结论。并给出了饱和因子 的表述式。
|
| 关 键 词： | 半导体激光器 线宽 |
The Second Order Theory on Linewidth Reduction of Semiconductor Lasers by External Cavities |
| |
| Chai Yanjie,Zhang Hanyi,Zhou Bingkun,Wu Qun. The Second Order Theory on Linewidth Reduction of Semiconductor Lasers by External Cavities[J]. Journal of Tsinghua University(Science and Technology), 1990, 0(1) |
| |
| Authors: | Chai Yanjie Zhang Hanyi Zhou Bingkun Wu Qun |
| |
| Affiliation: | Chai Yanjie,Zhang Hanyi,Zhou Bingkun,Wu Qun Department of Electronic Engineering |
| |
| Abstract: | The linewidth performance of semiconductor lasers coupled to long passive external cavities is theoretically studied with second order approximation. It is found for the first time that linewidth reduction will saturate at long external cavity length. An expression of the saturate factor is also given formularily. |
| |
| Keywords: | semiconductor laser linewidth |
| 本文献已被 CNKI 等数据库收录！ |
