| 用10.6μm红外激光辐照在硅中掺入铝和锑制备大面积p-n结的研究 |
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| 引用本文： | 钟涛,林理彬,范安辅. 用10.6μm红外激光辐照在硅中掺入铝和锑制备大面积p-n结的研究[J]. 应用科学学报, 1992, 0(3) |
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| 作者姓名： | 钟涛 林理彬 范安辅 |
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| 作者单位： | 四川大学(钟涛，林理彬)，四川大学(范安辅) |
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| 摘 要： | 用脉冲高能红外激光(波长10.6μm),在N型和P型单晶硅中分别掺入铝和锑,制备了最大面积可达φ20mm的p-n结.激光掺杂存在一个阈值能量密度.掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关.并对p-n结的伏安特性,扩散层薄层电阻和光生电压进行了测试.
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| 关 键 词： | 激光掺杂 阈值能量 预热 |
INVESTIGATION ON PREPARATION OF p-n JUNCTION OF LARGE AREA BY IRRADIATION DOPING AI OR Sb IN Si USING 10.6 um INFRA RED LASER |
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| ZHONG TAG LIN LIBIN PAN ANFU. INVESTIGATION ON PREPARATION OF p-n JUNCTION OF LARGE AREA BY IRRADIATION DOPING AI OR Sb IN Si USING 10.6 um INFRA RED LASER[J]. Journal of Applied Sciences, 1992, 0(3) |
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| Authors: | ZHONG TAG LIN LIBIN PAN ANFU |
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| Affiliation: | Sichuan University |
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| Abstract: | The preparation of p-n junctions of large area (maximum area 20 mm) Toy irradiat ion doping Al and Sb in N and P type crystals Si respectively using h Lgh-energy pulse infra-red laser (wavelength = 10.6 um) is carried out. It is found that there is a threshold energy density in laser doping, and distributions of dopant density an d depth have relation to preheat temperature and plating layer thickness of the impurities. Volt-ampere characteristics, thin-layer resistance and photvoltage of the p-n junction are measured. |
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| Keywords: | laser doping threshold energy preheat. |
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