| 铌膜的反应离子束刻蚀 |
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| 引用本文： | 周家槐 杨森祖. 铌膜的反应离子束刻蚀[J]. 南京大学学报(自然科学版), 1992, 28(2): 239-242 |
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| 作者姓名： | 周家槐 杨森祖 |
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| 作者单位： | 南京大学信息物理系，南京大学信息物理系，南京大学信息物理系，南京大学信息物理系 |
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| 摘 要： |
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| 关 键 词： | 铌膜 反应离子刻蚀 干刻 |
REACTIVE ION ETCHING OF NIOBIUM |
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| Zhou Jiahuai Yang Senzu Wu Peiheng Zhang Hui. REACTIVE ION ETCHING OF NIOBIUM[J]. Journal of Nanjing University: Nat Sci Ed, 1992, 28(2): 239-242 |
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| Authors: | Zhou Jiahuai Yang Senzu Wu Peiheng Zhang Hui |
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| Affiliation: | Department of Information Physics |
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| Abstract: | The RIE procees can be useful in producing Nb electrodes for SIS junction. In this paper the RIE of Niobium and photoresist in CF_4/ O_2 gases, quartz plate cathode and teflon anode has been studied. The curves of etching rates of Niobium and photoresist vs. percentage of oxygen on CF_4 / O_2 and the curve of etching rates as a function of pressure have been obtained, which will offer some. advice for the fabrication of Nb / A1-A1O_x / Nb SIS junction. |
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| Keywords: | dry etching reacive ion etching niobium tunnel junction |
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