| 非晶态半导体多层膜结构的低角度X射线衍射研究 |
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| 引用本文： | 徐骏 姜建功. 非晶态半导体多层膜结构的低角度X射线衍射研究[J]. 南京大学学报(自然科学版), 1992, 28(2): 224-229 |
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| 作者姓名： | 徐骏 姜建功 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： |
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| 关 键 词： | 非晶态半导体 多层膜 X射线 衍射 |
THE STUDY OF AMORPHOUS SEMICONDUCTOR MULTILAYER STRUCTURES BY LOW-ANGLE DIFFRACTION TECHNIQUE |
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| Xu Jun Jiang Jiangong Jiang Shusheng Chen Kunji. THE STUDY OF AMORPHOUS SEMICONDUCTOR MULTILAYER STRUCTURES BY LOW-ANGLE DIFFRACTION TECHNIQUE[J]. Journal of Nanjing University: Nat Sci Ed, 1992, 28(2): 224-229 |
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| Authors: | Xu Jun Jiang Jiangong Jiang Shusheng Chen Kunji |
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| Affiliation: | Department of Physics |
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| Abstract: | In this paper, the periodicity, the thickness and interfacial flatness of compositional modulation layers, as well as microstructures on a-Si:H/a-SiCx:H multilayer, have been studied by using Low-angle X-ray diffraction technique. The results show that most of the sublayer structures have fine periodicity and have sharp interfaces in an atomic size. The values of modulation thickness calculated from the position and intensity of diffraction peaks are in good agreement with the design values according to the deposition rate. The fluctuation of periodic structures due to the influence of gas flow mode has also been observed and discussed for samples prepared by the glow discharged method. |
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| Keywords: | amorphous semiconductor multilayer low-angle X-ray diffraction |
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