磁控溅射沉积Cu-W薄膜的结构及性能

 以磁控溅射制备W原子数分数为2.1%~53.1%的Cu-W薄膜,用EDX、XRD、TEM、SEM、显微硬度计和四探针电阻仪对薄膜成分、结构和性能进行表征,研究薄膜中W含量的变化对薄膜结构及性能的影响.结果表明,Cu-W薄膜呈纳米晶结构,含x=2.1%~16.2%W的Cu-W膜中存在W在Cu中的铜基fcc Cu(W) 非平衡亚稳过饱和固溶体,Cu-36.0%W膜中存在fcc铜基和bcc钨基双相固溶体,含x=48.7%~53.1%W的Cu-W膜则存在Cu在W中的钨基bcc W(Cu)亚稳过饱和固溶体.具两相结构的Cu-36%W薄膜的显微硬度最大,而Cu-W膜电导率则随W含量上升而持续降低.400 ℃退火1 h后,Cu-W薄膜发生基体相晶粒长大,硬度降低,但电导率提高.Cu-W薄膜在退火后结构和性能变化的主要原因是退火中基体相晶粒发生了长大.

Structure and properties of Cu-W thin films deposited by magnetron sputtering

The composition,structure and properties of Cu-W alloy thin films with W fraction of atonic number 2.1 %—53.1 % prepared by magnetron sputtering were characterized by EDX,XRD,TEM,SEM,microhardness instrument and four-point probe resistance meter.The effect of different W content on the structure and properties of Cu-W thin films was discussed in detail.The results show that Cu-W thin films possess nanocrystalline structure.Cu-W thin films with 2.1 %—16.2 %W fraction of atomic number possess fcc Cu(W) non-equilibrium metastable supersaturated solid solution,the film with 36.0 %W fraction of atomic number possess fcc Cu(W) and bcc W(Cu) two-phase solid solution,Cu-W thin films with 48.7 %—53.1 %W fraction of atomic number possess bcc W(Cu) metastable supersaturated solid solution.The microhardness of Cu-36 %W with two-phase is the highest(714MPa),the electrical conductivity of Cu-W films decrease with the increment of W contents.After annealed at 400 ℃ for 1h,the Cu-W films reveal a coarseness in the grain size of the matrix phases,the microhardness decreases,but the electrical conductivity increases.The evolution of structures and properties of Cu-W thin films after annealing are mainly attributed to the growth of matrix phase grain during annealing.