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磁性隧道结自旋极化电子隧穿的温度特性
引用本文:刘彩霞,刘波粒.磁性隧道结自旋极化电子隧穿的温度特性[J].河北大学学报(自然科学版),1999(2).
作者姓名:刘彩霞  刘波粒
作者单位:河北师范大学电教系(刘彩霞),河北师范大学电子系(刘波粒)
摘    要:基于自由电子模型,研究了铁磁金属/绝缘体(半导体)/铁磁金属(FM/I(S)/FM)隧道结自旋极化电子隧穿的温度特性。从结论可以定性地解释有关的实验现象。

关 键 词:磁性隧道结  自旋极化电子隧穿  自旋极化度  巨磁电阻  隧穿磁电阻

The Temperature Dependence of the Spin-polarized Tunneling Electrons inthe Magnetic Tunnel Junction
LIU Cai_xia,LIU Bo_li.The Temperature Dependence of the Spin-polarized Tunneling Electrons inthe Magnetic Tunnel Junction[J].Journal of Hebei University (Natural Science Edition),1999(2).
Authors:LIU Cai_xia  LIU Bo_li
Institution:LIU Cai_xia1,LIU Bo_li2
Abstract:Based on the free-electron model, we have investigated the temperature dependence of the spin-polarized tunneling electrons in the ferromagnet/insulator(semiconductor)/ferromagnet(FM/I(S)/FM) magnetic tunnel junction. The related experimental phenomenon can be explained by our conclusion.
Keywords:magnetic tunnel junction  spin-polarized tunneling  spin-polarized degree  giant    magnetoresistance(GMR)  tunneling magnetoresistance (TMR)
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