| 多孔硅光致发光的时间效应 |
| |
| 引用本文： | 李清山 方容川. 多孔硅光致发光的时间效应[J]. 中国科学技术大学学报, 1993, 23(3): 258-261 |
| |
| 作者姓名： | 李清山 方容川 |
| |
| 作者单位： | 中国科学技术大学物理系(李清山)，中国科学技术大学物理系(方容川) |
| |
| 摘 要： | 讨论多孔硅制备时阳极化时间、样品在大气中的放置时间对多孔硅室温下光致发光光谱和红外吸收光谱的影响。并用量子线模型对结果进行了讨论。
|
| 关 键 词： | 多孔硅 光致发光 红外吸收光谱 时间效应 |
Time Effect on Photoluminescence in Porous Silicon |
| |
| Li Qingshan Fang Rongchuan. Time Effect on Photoluminescence in Porous Silicon[J]. Journal of University of Science and Technology of China, 1993, 23(3): 258-261 |
| |
| Authors: | Li Qingshan Fang Rongchuan |
| |
| Affiliation: | Department of Physics |
| |
| Abstract: | In this paper, photoluminescence and infrared absorption spectra at room temperature in porous silicon are discussed as a function of anodized time and the time in which the sample is exposed to the air. The results are explained in terms of the model of quantum confinement effects. |
| |
| Keywords: | porous silicon photoluminescence infrared spectrum time effect |
| 本文献已被 CNKI 维普 等数据库收录！ |
