| 硅四端横向压阻式压力传感器的解析模型 |
| |
| 引用本文： | 周国祥,柯导明,陈军宁,徐海卫.硅四端横向压阻式压力传感器的解析模型[J].中国科学技术大学学报,2005,35(5):634-638. |
| |
| 作者姓名： | 周国祥 柯导明 陈军宁 徐海卫 |
| |
| 作者单位： | 1. 合肥工业大学计算机系,安徽,合肥,230009
2. 安徽大学电子工程系,安徽,合肥,230039 |
| |
| 摘 要： | 用摄动法求解了硅横向压阻效应四端器件的偏微分方程.用渐近解的分析方法对所求到的解进行简化,导出了硅横向压阻效应四端压力传感器的输出电压表达式.所得公式能够定量表达输出电压与输入参量和器件几何参数的关系,所得到结果与数值解和实验结果吻合.
|
| 关 键 词： | 硅的压阻效应 四端器件 解析模型 |
| 文章编号： | 0253-2778（2005）05-0634-05 |
| 收稿时间： | 2004-05-26 |
| 修稿时间： | 2004-11-26 |
An Analysis Model of A Four-Terminal Silicon Piezoresistive Transducer |
| |
| ZHOU Guo-xiang,KE Dao-ming,CEN Jun-ning,XU Hai-wei.An Analysis Model of A Four-Terminal Silicon Piezoresistive Transducer[J].Journal of University of Science and Technology of China,2005,35(5):634-638. |
| |
| Authors: | ZHOU Guo-xiang KE Dao-ming CEN Jun-ning XU Hai-wei |
| |
| Institution: | 1. Department of Computer and In formation, Hefei University of Technology, Hefei 230009, China; 2. Department of Electronic Engineering, Anhui University, Hefei 230039, China |
| |
| Abstract: | A differential equation of a silicon piezoresistive transducer has been resolved with methods of perturbation and asymptotic series, by which an expression of output voltages for a four-terminal silicon piezoresistive transducer was given. The expression can be used in calculation for relationships of the input voltage, output voltage and device geometry parameter. The results based on the expressions are in agreement with experimental and numerical values. |
| |
| Keywords: | silicon piezoresistive effects four-terminal silicon device analysis model |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
