后注Ar^＋对高能注P^＋硅中二次缺陷的影响

用剖面的电子显微术(XTEM)研究了后注Ar~+对高能注P~+硅中二次缺陷的影响。结果表明,后注Ar~+像后注Si~+一样能够减少高能注P~+硅中的二次缺陷。但这种效果与退火过程密切相关,退火应该在后注Ar~+之后,而不是在其之前。实验还发现,在适当退火条件下,后注Ar~+产生的新二次缺陷比后注Si~+产生的要少一些。物理机制分析认为,后注Ar~+减少二次缺陷的物理机制与后注Si~+的是相似的。

THE EFFECT OF POST-IMPLANTED Ar~+ ON THE SECONDARY DEFECT IN HIGH ENERGY P+-IMPLANTED SILICON

By using cross-sectional transmission electron microscopy(XTEM) the effect of post-implanted Ar~+ on the secondary defects in high energy P~+-implanted silicon are investigated. The results show that as well as post-implanted Si~+, post-implanted Ar~+ can reduce the secondary defects in high energy P~+-implanted silicon. However, this reduction is closely related to annealing process. The annealing should be carried out after the post-implantation of Ar~+, but not before it. It is found that under the suitable annealing conditions, the new secondary defects caused by post-implantation of Ar~+ are a little bit less than that caused by post-implantation of Si~+. The analysis considers that the physical mechanism of the reduction of secondary defects by post-implantation of Ar~+ is same as that by the posti-mplantation of Si~+.