PIN管正偏注入的载流子在Ⅰ层中分布的研究

本文认为,Ⅰ层中不会有电子浓度和空穴浓度处处相等的电中性近似,这两种浓度都要随扩散距离的增加而衰减.本文用准中性条件来求解电子和空穴的连续性方程,导出这两种浓度都按扩散距离的负指数函数在Ⅰ层中分布.这样,其载流子一载流子散射效应可忽略不计,其俄歇复合较小,比用电中性近似求得的载流子分布的俄歇复合要小许多倍.

Study on Distribution of Injected Carrier Densities in the I-Layer of a Forward Biased PIN Diode

This paper thinks that. there is no charge neutrality approximation in the I-layer wherever the electron density is equal to the hole density. These two kinds of densities in the I-layer of a forward biased PIN diode will be decreased with the increasing of the diffusion distance. We use the quasi-neutrality condition to solve continuity equations of the electron and hole densities and obtain the electron and hole density distributions in the I-layer which are the negative exponential function of the diffusion dis- tance. The effect of the carrier-carrier scattering may then be neglected and the Auger recombination is much less than that of the carrier distribution obtained by using the neutrality approximation.