| Analysis of magnetic mechanisms of 3d-doped ZnO diluted magnetic semiconductors by an abnormal peak on M-T curve |
| |
| 作者姓名： | PENG YingZi THOMAS Liew YE ZhiZhen ZHANG YinZhu |
| |
| 作者单位： | Data Storage |
| |
| 基金项目： | Supported by the Hangzhou Dianzi University Fund （Grant No. KYF091506003） and funds from State Key Lab of Silicon Materials, Zhejiang University （Grant No. 2000603） The authors thank K.W.Sun and Y.M.Wang in Department of Physics of Hangzhou Dianzi University for their helpful discussions. The authors also thank Dr. D. F. Li for his kindly help. The authors are grateful to Data Storage Institute of Singapore for the support. |
| |
| 摘 要： | The crystallographic structures and magnetic properties of a Zn0.95Co0.05O thin film deposited on a C-sapphire substrate using a dual-beam pulsed laser deposition method were characterized. It was shown from crystallographic analysis that the film belongs to the wurtzite structure with the C-axis aligned with that of the substrate. Magnetic hysteresis loops were observed till up to room temperature. A small peak around 55 K was noticed on the magnetization vs. temperature curve. The corresponding temperature of the small peak is close to that of ‘the abnormal peak’ reported by X.M. Zhang et al. From the results obtained, no correlation was found between the abnormal peak and the quantum effects. The magnetic behaviors in the Zn0.95Co0.05O film cannot be explained by the ferromagnetism in diluted magnetic semiconductors. The magnetic mechanisms in ZnO-based diluted magnetic semiconductors are also discussed.
|
| 关 键 词： | 弱磁半导体 抗磁性 氧化锌 性能 |
| 收稿时间： | 9 April 2007 |
| 修稿时间： | 2007-04-09 |
Analysis of magnetic mechanisms of 3d-doped ZnO diluted magnetic semiconductors by an abnormal peak on <Emphasis Type="Italic">M-T</Emphasis> curve |
| |
| PENG YingZi THOMAS Liew YE ZhiZhen ZHANG YinZhu.Analysis of magnetic mechanisms of 3d-doped ZnO diluted magnetic semiconductors by an abnormal peak on M-T curve[J].Chinese Science Bulletin,2007,52(20):2742-2746. |
| |
| Authors: | Peng YingZi Ye ZhiZhen Zhang YinZhu |
| |
| Institution: | (1) Institute of Materials and Physics, School of Science, Hangzhou Dianzi University, Hangzhou, 310018, China;(2) Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore;(3) Department of Electrical and Computer Engineering, National University of Singapore, 119260 Singapore, Singapore;(4) State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, China |
| |
| Abstract: | The crystallographic structures and magnetic properties of a Zn0.95Co0.05O thin film deposited on a C-sapphire substrate using a dual-beam pulsed laser deposition method were characterized. It was
shown from crystallographic analysis that the film belongs to the wurtzite structure with the C-axis aligned with that of the substrate. Magnetic hysteresis loops were observed till up to room temperature. A small peak
around 55 K was noticed on the magnetization vs. temperature curve. The corresponding temperature of the small peak is close
to that of ‘the abnormal peak’ reported by X.M. Zhang et al. From the results obtained, no correlation was found between the
abnormal peak and the quantum effects. The magnetic behaviors in the Zn0.95Co0.05O film cannot be explained by the ferromagnetism in diluted magnetic semiconductors. The magnetic mechanisms in ZnO-based
diluted magnetic semiconductors are also discussed.
Supported by the Hangzhou Dianzi University Fund (Grant No. KYF091506003) and funds from State Key Lab of Silicon Materials,
Zhejiang University (Grant No. 2000603) |
| |
| Keywords: | diluted magnetic semiconductor (DMS) magnetic mechanism abnormal magnetic behavior ZnO based |
| 本文献已被 CNKI 维普 万方数据 SpringerLink 等数据库收录！ |
| 点击此处可从《中国科学通报(英文版)》浏览原始摘要信息 |
| 点击此处可从《中国科学通报(英文版)》下载免费的PDF全文 |
