| In_2O_3准一维纳米结构的可控制备研究 |
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| 引用本文： | 池凌飞,孙凯,赵传熙,吴萍.In_2O_3准一维纳米结构的可控制备研究[J].汕头大学学报(自然科学版),2010,25(3):32-38. |
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| 作者姓名： | 池凌飞 孙凯 赵传熙 吴萍 |
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| 作者单位： | 汕头大学物理系,广东,汕头,515063 |
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| 基金项目： | 汕头大学青年科研基金资助项目 |
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| 摘 要： | 以In2O3和活性炭混合物为蒸发源,利用化学气相沉积法在硅衬底上制备了In2O3纳米线.对In2O3纳米线的生长机理进行讨论,认为在衬底表面维持一定的氧化铟基团浓度是导致出现In2O3纳米线的原因,因此可以通过调节氧化铟基团的浓度去控制准一维In2O3纳米结构的生长.
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| 关 键 词： | 氧化铟 纳米线 可控制备 生长机理 |
Study of In2O3 Quasi-One Dimension Nanostructures Controllable Synthesis Approach |
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| CHI Ling-fei,SUN Kai,ZHAO Chuan-xi,WU Ping.Study of In2O3 Quasi-One Dimension Nanostructures Controllable Synthesis Approach[J].Journal of Shantou University(Natural Science Edition),2010,25(3):32-38. |
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| Authors: | CHI Ling-fei SUN Kai ZHAO Chuan-xi WU Ping |
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| Institution: | (Department of Physics,Shantou University,Shantou 515063,Guangdong,China) |
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| Abstract: | The In2O3 nanowires were synthesized on the silicon substrates by the chemical vapor deposition method,which used the mix of indium oxide powder and active carbon as vapor source.The growth mechanism of In2O3 nanowires was discussed.It was found that the growth of In2O3 nanowires was attributed to the proper indium oxide species concentration on the substrate surface.Therefore,the growth of quasi-one dimension In2O3 nanostructures can be controlled by tuning the indium oxide species concentration. |
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| Keywords: | indium oxide nanowires controllable synthesis growth mechanism |
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