Theoretical analysis and simulation of InP-based uni-traveling-carrier photodetector

In this paper the photocurrent response of InP-based uni-traveling-carrier photodetectors (UTC-PDs) is analyzed using the drift-diffusion approach. Based on the theoretical analysis, an InP/InGaAs UTC-PD is modeled utilizing a numerical device simulator (ATLAS), and the physics of the device’s operation and its performance as a function of biasing and power level are simulated. The simulation results in-dicate that the linear dynamic range is up to 60 mW, the f−_{3 dB} is about 40 GHz and the full-width at half-maximum (FWHM) of the current pulse is 28 ps with 10 mW optical power injection for an optimized structure UTC-PD.