| Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature |
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| 作者姓名： | HE Deyan WANG Xiaoqiang CHEN Qiang LI Junshuai YIN Min A. V. Karabutov A. G. Kazanskii |
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| 作者单位： | GENERAL PHYSICS INSTITUTE VAVILOVA STR. 38 Ⅳ119991 MOSCOW RUSSIA，MOSCOW STATE UNIVERSITY VOROBYEVY GORI 119992 MOSCOW RUSSIA |
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| 基金项目： | Acknowledgements This work was supported by the National Natural Science Foundation of China （Grant No. 10175030） and Natural Science Foundation of Gansu Province （Grant No. 4WS035-A72-134）. |
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| 摘 要： | ELECTRON FIELD EMISSION IS ONE OF THE INTERESTING PER- FORMANCES OF NANO-SCALE MATERIALS 1-3]. CARBON NANO- TUBES HAVE BEEN DEMONSTRATED TO BE THE MOST FASCINAT- ING MATERIAL OF ELECTRON FIELD EMISSION, BUT THEIR INSTA- BILITY OF EMISSION DUE TO THE AGING EFFECT LIMITS THEIR APPLICATION IN VACUUM ELECTRONICS 4]. SI TIPS HAVE MORE FAVORITE GEOMETRIC FEATURE AND MORE STABLE C…
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| 关 键 词： | 纳米晶硅薄膜 电子场发射 感应耦合等离子体 化学气相沉积 低温生长 ICP-CVD |
| 收稿时间： | 2005-09-20 |
| 修稿时间： | 2005-09-202005-10-17 |
Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature |
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| HE Deyan WANG Xiaoqiang CHEN Qiang LI Junshuai YIN Min A. V. Karabutov A. G. Kazanskii.Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature[J].Chinese Science Bulletin,2006,51(5):510-514. |
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| Authors: | Deyan He Xiaoqiang Wang Qiang Chen Junshuai Li Min Yin A V Karabutov A G Kazanskii |
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| Institution: | (1) Department of Physics, Lanzhou University, Lanzhou, 730000, China;(2) General Physics Institute, Vavilova str. 38, iv 119991 Moscow, Russia;(3) Moscow State University, Vorobyevy Gori, 119992 Moscow, Russia |
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| Abstract: | Silicon thin films were deposited by inductively coupled plasma CVD at room temperature. Raman spectrum and atomic force microscopy
were used to characterize the structure and topography of the samples. It was shown that, under the optimum plasma conditions,
nano-crystalline Si film was grown with high-density Si tips in a random distribution on surface. The height and the mean
basal diameter of the Si tips were 30–40 nm and ∼200 nm, respectively. The film with such a surface topography was demonstrated
to have good behavior of electron field emission. The typical threshold field is about 7–10 V/μm. |
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| Keywords: | ICP-CVD nano-scale Si tips electron field emission low-temperature growth |
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