辐射对半导体霍尔器件输入电阻的影响

用60Co、137Cs、90Sr-90Y放射源低剂量率对恒流激励、无磁场作用时的InSb、GaAs、Si、Ge等半导体霍尔器件进行短时辐照,测量了辐照过程中各器件输入电阻的变化。结果表明:因为位移效应所引起的辐射缺陷,三种辐照均导致各器件输入电阻增加,并与辐照时间成正比。比较相同射线、相同时间辐照所引起的输入电阻变化量,可以判定Ge器件的抗辐射能力最强,Si器件次之,InSb、GaAs器件最差。

Effects of Irradiation on the Input Resistance of Semiconductor Hall Transducers

The effects of short-term irradiation with low dose rate radiant point,including 60Co,137Cs and 90Sr-90Y,on the input resistance of InSb,GaAs,Si and Ge semiconductor Hall transducers,driven by constant current and not in any magnetic field,were systemically studied.The results indicated that three types of irradiation all can cause input resistance of any device to linearly increase with irradiation time because of radiation defects induced by the displacement effect.According to the changes of input resistance induced by the same rays in the same time,the anti-radiation capability of devices can be estimated.Among these types of devices,the maximal are Ge devices,the next are Si devices and the minimal are InSb and GaAs devices.