以NiFeNb为新种子层的纳米级坡莫合金薄膜的各向异性磁电阻

以三元合金NiFeNb作新种子层,采用直流磁控多靶设备制备了具有不同Nb含量(x)、NiFeNb厚度(t)和坡莫合金厚 度(d)的纳米级(Ni82Fe18)1-xNbx(tnm)/Ni82Fe18(dnm)/Ta(3nm)坡莫合金系列膜.测量了样品的各向异性磁电阻和微结 构.从实验角度详细研究了AMR随x,t,d和退火等工艺条件的变化.结果表明:①作为x或t的函数,AMR在x=23.8% 或x=2.75nm处分别最大;②NiFeNb作为种子层在提高坡莫合金薄膜各向异性磁电阻方面优于Ta;③在通过中高温退 火来改善坡莫合金薄膜AMR方面,NiFeNb种子层明显好于Ta和NiFeCr.

Anisotropy Magnetoresistance of Nanometer Permalloy Films with New Seed Layer NiFeNb

Using Ternary alloy NiFeNb as a new seed layer, the (Ni82 Fe18 ) 1 -x Nbx (t nm)/Ni82 Fe18 (d nm)/Ta(3 nm)films are prepared with a DC magnetron sputtering system. Anisotropy Magnetoresistance and microstructures are measured for as-grown and annealed films. Effects of x, t, d and annealing on AMR are studied systematically from experiment. Rresults show that: 1. as a function of x or t, AMR has a topped peak at x=23.8% or t=2.75 nm, respectively; 2. in improving AMR, NiFeNb is superior to Ta;3. in enhancing AMR through moderate or high temperature-annealing, NiFeNb is superior to Ta and NiFeCr significantly.