| 高压下GaN的光学特性 |
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| 引用本文： | 柳福提,张淑华,高增辉.高压下GaN的光学特性[J].山东大学学报(理学版),2010,45(1):69-72. |
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| 作者姓名： | 柳福提 张淑华 高增辉 |
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| 作者单位： | 1. 宜宾学院物理与电子工程系,四川,宜宾,644000
2. 宜宾学院化学与化工系,四川,宜宾,644000 |
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| 基金项目： | 四川省科技厅资助项目 |
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| 摘 要： | 根据密度泛函理论,采用平面波赝势和广义梯度方法,研究了闪锌矿结构的GaN晶体在不同压强下的光学性质。结果表明,随着压强的增大,直接带隙和间接带隙都逐渐增大;在外界压强为125 GPa时,GaN从直接带隙半导体变成间接带隙半导体,吸收波段出现了蓝移的现象。
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| 关 键 词： | 密度泛函理论 闪锌矿结构 态密度 |
| 收稿时间： | 2009-09-16 |
The optical property of GaN under high pressure |
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| LIU Fu-ti,ZHANG Shu-hua,GAO Zeng-hui.The optical property of GaN under high pressure[J].Journal of Shandong University,2010,45(1):69-72. |
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| Authors: | LIU Fu-ti ZHANG Shu-hua GAO Zeng-hui |
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| Abstract: | The optical property of zinc blend structure GaN under different high pressures was investigated by means of the plane wave pseudo-potential method with generalized gradient approximation. The results show the indirect band gap and the direct band gap widened with pressure increasing. GaN changed from direct band gap to indirect band gap semiconductor when ambient pressure reaches 125 GPa. Also, there was a blue shift at absorption wavelength with increasing pressure. |
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| Keywords: | density functional theory zinc blende structure density of states |
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