| Cu表面氧化规律及其对铜—陶瓷材料键合强度的影响 |
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| 引用本文： | 张晓辉.Cu表面氧化规律及其对铜—陶瓷材料键合强度的影响[J].西安交通大学学报,1998,32(8):12-15. |
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| 作者姓名： | 张晓辉 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 在用于电力半导体模块的新型封装材料ＣｕＡｌ２Ｏ３陶瓷直接键合基板中，Ｃｕ与Ａｌ２Ｏ３间形成的键合，是通过ＣｕＡｌＯ化学键，以Ｃｕ２Ｏ为中介形成的，其键合强度主要受ＣｕＣｕ２Ｏ之间的结合力限制．从而可以认为，铜箔表面的氧化层对键合强度起着极为重要的作用．为此，文中对Ｃｕ表面的氧化规律、氧化层厚度与时间和温度间的关系及其对ＤＣＢ板界面键合强度的影响进行了仔细的研究，获得了较理想的结果．
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| 关 键 词： | 电力半导体器件 陶瓷 键合 氧化 |
Oxidization Behavior at the Surface of Copper and Its Effect on Bonding Strength of Direct Copper Bonding Ceramic Materials |
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| Zhang Xiaohui,Xu Chuanxiang,Zhu Hongwei.Oxidization Behavior at the Surface of Copper and Its Effect on Bonding Strength of Direct Copper Bonding Ceramic Materials[J].Journal of Xi'an Jiaotong University,1998,32(8):12-15. |
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| Authors: | Zhang Xiaohui Xu Chuanxiang Zhu Hongwei |
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| Abstract: | Copper and Al 2O 3 ceramic are bonded together by Cu Al O chemical bond such that Cu 2O acts as the interphase. It is used as a packaging material in the electrical power semiconductor module. The oxide film at the copper surface will affect the bonding strength which is limited by the joint strength of Cu Cu 2O. Studied in this work are the oxidization behavior of copper surface, and time/ temperature effect on oxide film thickness, in addition to their influence on the bonding strength at the copper ceramic interface of the direct copper bonding ceramic substrate. |
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| Keywords: | electrical power semiconductor device ceramic bonding oxide |
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