首页 | 本学科首页   官方微博 | 高级检索  
     

沸腾回流法制备Al元素掺杂ZnO及表征
引用本文:鲁彬,李平,李征,魏雨. 沸腾回流法制备Al元素掺杂ZnO及表征[J]. 河北师范大学学报(自然科学版), 2007, 31(2): 222-224
作者姓名:鲁彬  李平  李征  魏雨
作者单位:1. 河北师范大学,化学与材料科学学院,河北,石家庄,050016
2. 河北师范大学,化学与材料科学学院,河北,石家庄,050016;中国科学院,山西煤炭化学研究所,山西,太原,030001
基金项目:河北省自然科学基金 , 河北师范大学校科研和教改项目
摘    要:采用液相沸腾回流法,制备出不同含量Al元素掺杂的ZnO半导体材料,并对产物进行了XRF,XRD,SEM及其导电性能的表征.实验结果表明:Al元素掺杂后产物ZnO的结构仍然为六方晶系纤锌矿结构;Al元素掺杂量不是无限增大的,当Al元素掺杂量达到24.0 mmol/L时,就会趋于饱和;Al元素掺杂的ZnO的导电性能比纯ZnO有所提高,因此证明了这是一条比较优化的工艺合成路线.

关 键 词:ZnO  Al掺杂  制备  性能
文章编号:1000-5854(2007)02-0222-03
修稿时间:2006-06-12

Preparation and Characterization of Al-doped ZnO via a Simple Method of Boiling Reflux
LU Bin,LI Ping,LI Zheng,WEI Yu. Preparation and Characterization of Al-doped ZnO via a Simple Method of Boiling Reflux[J]. Journal of Hebei Normal University, 2007, 31(2): 222-224
Authors:LU Bin  LI Ping  LI Zheng  WEI Yu
Affiliation:1. College of Chemistry and Material Sciences,Hebei Normal University,Hebei Shijiazhuang 050016,China; 2. Institute of Coal Chemistry,Chinese Academy of Sciances,Shanxi Taiyuan 030001 ,China
Abstract:Al-doped ZnO semiconductor materials with different component were prepared via a simple solution route,boiling reflux method.The obtained samples were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),and X-ray fluorescence(XRF).The electrical properties of the products were also studied.Results show that the Al-doped ZnO particles were of hexagonal wurtzite structure.The percent of doped Al in the products was not infinite.It would be statured when the original concentration of Al reached 24.0 mmol/L.Furthermore,the electrical properties of Al-doped ZnO material were improved,compared with pure ZnO.
Keywords:zinc oxide  Al-doped  preparation  property
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号