| 四端硅压力传感器的解析模型 |
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| 引用本文： | 丁浩,樊进,尹燕,洪琪,柯导明,陈军宁. 四端硅压力传感器的解析模型[J]. 安徽大学学报(自然科学版), 2004, 28(5): 51-55 |
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| 作者姓名： | 丁浩 樊进 尹燕 洪琪 柯导明 陈军宁 |
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| 作者单位： | 1. 安徽大学,电子科学与技术学院,安徽,合肥,230039
2. 中国科学技术大学,电子工程和信息科学系,安徽,合肥,230027 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，安徽省自然科学基金 |
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| 摘 要： | 利用正则摄动法,采用合理的边界条件,求解四端硅压力传感器二维电势的偏微分方程,得出了该传感器二维电势的解析表达式;并由此导出了随应力而变的最大输出电压的解析表达式,且给出了输出电压与器件尺寸的精确关系。该模型物理意义明确,参数提取方便,其计算结果与数值解、实验数据较好吻合,可以很方便地进行器件设计和模拟。
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| 关 键 词： | 四端硅压力传感器 正则摄动 解析表达式 |
| 文章编号： | 1000-2162(2004)05-0051-05 |
An analytical model for the output voltage of four-terminal silicon pressure transducers |
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| DING Hao,FAN Jin,YIN Yan,HONG Qi,KE Dao-ming,CHEN Jun-ning. An analytical model for the output voltage of four-terminal silicon pressure transducers[J]. Journal of Anhui University(Natural Sciences), 2004, 28(5): 51-55 |
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| Authors: | DING Hao FAN Jin YIN Yan HONG Qi KE Dao-ming CHEN Jun-ning |
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| Affiliation: | DING Hao~1,FAN Jin~1,YIN Yan~2,HONG Qi~1,KE Dao-ming~1,CHEN Jun-ning~1 |
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| Abstract: | By using normal perturbation method with reasonable boundary conditions, the paper resolves a partial differential equation of the two-dimensional potential of four-terminal silicon pressure transducers, and the analytical expression of the two-dimensional potential is derived accordingly. The analytic expression of the maximum output voltage with the influence of pressure and the exact relationship between the output voltage and device size are also derived. The model has clear physical meaning and easy extraction of used parameters. The results of this model correspond with the numerical and experimental data very well. So this model can be used in design and simulation of four-terminal piezoresistive pressure transducers. |
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| Keywords: | four-terminal silicon pressure transducer normal perturbation analytic (expressions) |
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